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2SK2691-01R
FAP-IIIB Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated
N-channel MOS-FET
60V
0,01
70A
100W
> Outline Drawing
> Applications
- Motor Control - General Purpose Power Amplifier - DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25C), unless otherwise specified
Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 60 70 280 20 685 100 150 -55 ~ +150
* L=0,186mH, VCC=24V
> Equivalent Circuit
Unit V A A V mJ* W C C
- Electrical Characteristics (TC=25C), unless otherwise specified
Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I V t Q
GSS DS(on)
fs iss oss rss d(on) r d(off) f AV SD rr rr
Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=60V Tch=25C VGS=0V Tch=125C VGS=20V VDS=0V ID=40A VGS=4V VGS=10V ID=40A VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V ID=75A VGS=10V RGS=10 Tch=25C L = 100H IF=160A VGS=0V Tch=25C IF=80A VGS=0V -dIF/dt=100A/s Tch=25C
Min. 60 1,0
Typ. 1,5 10 0,2 10 0,012 0,0075 55 3500 1250 360 15 75 190 110 1,15 75 0,17
Max. 2,0 500 1,0 100 0,017 0,01 5250 1870 540 23 120 285 165 1,65 120
25
70
Unit V V A mA nA S pF pF pF ns ns ns ns A V ns C
- Thermal Characteristics Item Thermal Resistance
Symbol R th(ch-a) R th(ch-c)
Test conditions channel to air channel to case
Min.
Typ.
Max. 30 1,25
Unit C/W C/W
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98
N-channel MOS-FET
60V
0,01
2SK2691-01R
FAP-IIIB Series
Drain-Source On-State Resistance vs. Tch
RDS(on) = f(Tch); ID=40A; VGS=10V
70A
100W
> Characteristics
Typical Output Characteristics
ID=f(VDS); 80s pulse test; TC=25C
Typical Transfer Characteristics
ID=f(VGS); 80s pulse test; VDS=25V; Tch=25C
ID [A]
RDS(ON) [m]
2
ID [A]
1
3
VDS [V]
Tch [C]
VGS [V]
Typical Drain-Source On-State-Resistance vs. ID
RDS(on)=f(ID); 80s pulse test; TC=25C
Typical Forward Transconductance vs. ID
gfs=f(ID); 80s pulse test; VDS=25V; Tch=25C
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch); ID=1mA; VDS=VGS
RDS(ON) [m]
gfs [S]
5
VGS(th) [V]
4
6
ID [A]
ID [A]
Tch [C]
Typical Capacitances vs. VDS
C=f(VDS); VGS=0V; f=1MHz
Typical Gate Charge Characteristic
VGS=f(Qg); ID=80A; TC=25C
Forward Characteristics of Reverse Diode
IF=f(VSD); 80s pulse test; Tch=25C
C [F]
VDS [V]
VGS [V]
IF [A]
7
8
9
VDS [V]
Qg [nC]
VSD [V]
Maximum Avalanche Energy vs. starting Tch
EAV=f(starting Tch): VCC=24V; IAV 70A
Safe Operation Area
ID=f(VDS): D=0,01, Tc=25C
Zth(ch-c) [K/W]
Transient Thermal impedance
Zthch=f(t) parameter:D=t/T
EAV [mJ]
10
ID [A]
12
starting Tch [C]
VDS [V]
t [s]
This specification is subject to change without notice!
N-channel MOS-FET
60V
0,01
2SK2691-01R
FAP-IIIB Series
Power Dissipation PD=f(TC)
70A
100W
> Characteristics
125
100
PD / PDmax [%]
75
50
25
0 0 25 50 75 TC [C] 100 125 150
Maximum Avalanche Current vs. starting Tch IAV=f(starting Tch)
110 100 90 80 70 IAV / IAVmax [%] 60 50 40 30 20 10 0 0 25 50 75 starting Tch [C] 100 125 150
This specification is subject to change without notice!

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